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2SA814 Datasheet, Toshiba Semiconductor

2SA814 transistor equivalent, silicon pnp transistor.

2SA814 Avg. rating / M : 1.0 rating-11

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2SA814 Datasheet

Features and benefits

. High Breakdown Voltage: VcEO="120V (2SA814) : VCEO=-100V (2SA815) . Complementary to 2SC1624 and 2SC1625. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Vol.

Application

DRIVER STAGE AMPLIFIER APPLICATIONS. SILICON PIMP EPITAXIAL BASE MESA TYPE Unit in mm 10.3 MAX. 0Z6±<2 FEATURES . Hig.

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2SA814 Page 1 2SA814 Page 2

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